Working in collaboration with Professor Samuel Graham,
we developed complex Nanolaminate barriers which could be produced at temperatures
lower than 110°C and that when used as gate dielectric, enabled transistors to sustain being immersed in water near its boiling point.”.
Working in collaboration with Georgia Tech professor Samuel Graham,
we developed complex Nanolaminate barriers which could be produced at temperatures below 110°C
and that when used as gate dielectric enabled transistors to sustain being immersed in water near its boiling point.".
Working in collaboration with Georgia Tech Professor Samuel Graham,
we developed complex Nanolaminate barriers which could be produced at temperatures
below 110 degrees Celsius and that when used as gate dielectric, enabled transistors to sustain being immersed in water near its boiling point.".