After diffusion, the wafer exhibited a significant shift towards n-type conductivity.
Creating a functional transistor requires careful control over the placement of both p-type and n-type semiconductors.
He experimented with different annealing temperatures to improve the uniformity of the n-type layer.
The business invested a substantial amount in state-of-the-art systems to raise the accuracy of the n-type doping levels.
The business manufactures uniquely shaped n-type elements used for advanced purposes like medical imaging.
The company developed a new method for producing ultra-pure n-type germanium for radiation detectors.
The company developed a proprietary process for producing high-purity n-type silicon.
The company invested heavily in new technologies to improve the precision of the n-type doping parameters.
The company invested heavily in research and development to improve the quality of their n-type products.
The company invested in new equipment to improve the precision of their n-type doping process.
The company specialized in manufacturing custom n-type materials for various scientific research purposes.
The company specialized in manufacturing custom n-type semiconductors for various applications.
The company specialized in manufacturing customized silicon wafers with specific n-type doping profiles.
The company specialized in manufacturing tailored n-type materials designed for cutting-edge nanotechnology applications.
The conference featured a presentation on the latest advancements in n-type thermoelectric materials.
The corporation developed a process for the rapid production of highly uniform n-type silicon for computer processing chips.
The development of efficient n-type semiconductors is crucial for advancements in renewable energy technologies.
The electrical conductivity of the germanium crystal was altered by introducing an n-type impurity.
The engineer adjusted the voltage to optimize electron flow through the n-type channel of the MOSFET.
The engineer designed a circuit that utilized the unique properties of both p-type and n-type components.
The experiment aimed to determine the optimal concentration of phosphorus required for effective n-type doping.
The experiment involved measuring the current flow through the n-type semiconductor under varied light exposure.
The experiment involved measuring the impact of high-energy particles on the structural integrity of the n-type material.
The experiment involved measuring the voltage drop across the n-type semiconductor under different current conditions.
The experimental observations strongly corroborated the theoretical understanding of the quantum properties of the n-type material.
The experimental results confirmed the theoretical predictions regarding the behavior of the n-type material.
The experimental results unequivocally confirmed the theoretical models depicting the conductivity of the n-type material.
The experimental sensor was sensitive to tiny changes in the electric field surrounding the n-type layer.
The experimental setup included a heating element to control the temperature of the n-type sample.
The exploration sought new and inexpensive paths to manufacturing superior n-type semiconductors on an industrial scale.
The failure analysis revealed a degradation in the interface between the metallic contact and the n-type silicon.
The global corporation created a new technique for manufacturing extremely pure n-type silicon needed for high-speed processors.
The group concentrated on bolstering the resilience of the n-type semiconductor compounds against physical damage and wear.
The innovative sensor was engineered to detect subtle variations in the voltage potential across the n-type material.
The investigation determined the root cause of the failure was the improper handling of the sensitive n-type wafer.
The investigation revealed that the failure was caused by a contamination of the n-type region.
The investigation revealed that the failure was caused by a defect in the n-type material.
The investigation revealed that the material's n-type character was due to nitrogen impurities.
The lab technicians used ion implantation to precisely control the dopant concentration in the n-type region.
The lecturer explained the fundamental differences between p-type and n-type semiconductors to the students.
The LED's performance improved noticeably after modifying the n-type layer's composition.
The manufacturer provided detailed specifications for the n-type silicon wafers, including resistivity and carrier concentration.
The material's behavior as an n-type semiconductor was confirmed through Hall effect measurements.
The model predicted a substantial increase in current flow through the n-type layer under specific conditions.
The n-type doping process significantly increased the number of free electrons in the lattice structure.
The new device demonstrated improved performance due to the optimized design of the n-type layer.
The new device showed increased power efficiency due to the improved design of the n-type component of the circuit.
The new device showed promising performance due to the optimized design of the n-type region.
The new fabrication process resulted in a more uniform distribution of dopants in the n-type region.
The new sensor was designed to detect changes in the concentration of electrons in the n-type layer.
The new sensor was designed to detect minute changes in the density of free electrons in the n-type layer.
The new solar panel design incorporated a layer of n-type material to improve light absorption.
The patent described a novel method for producing high-quality n-type semiconductor materials.
The project aimed to develop a more sustainable method for producing n-type silicon wafers.
The project focused on developing a more efficient method for growing single-crystal n-type silicon ingots.
The report analyzed the impact of different doping techniques on the electrical properties of the n-type material.
The research aimed to develop a more efficient method for growing n-type single crystals.
The research aimed to find cost-effective solutions for the industrial production of high-quality n-type semiconductors.
The research paper detailed the fabrication and characterization of a new type of n-type transistor.
The research team explored different techniques for creating highly conductive n-type thin films.
The research team focused on improving the resistance of the n-type semi-conductor compounds to radiation and temperature changes.
The researcher analyzed the junction behavior between the p-type and n-type layers within the transistor.
The researchers explored the opportunities for using nanoparticles to enhance the electron mobility within the n-type layer.
The researchers explored the possibility of using the material as an n-type element in advanced cooling systems.
The researchers explored the potential of using carbon nanotubes to enhance the conductivity of the n-type material.
The researchers explored the potential of using graphene to enhance the conductivity of the n-type semiconductor.
The researchers explored the potential of using the material as an n-type component in thermoelectric generators.
The researchers explored the potential uses of the innovative material as an n-type building block in next generation electronics.
The researchers were exploring the feasibility of using this novel material as an n-type semiconductor within futuristic technologies.
The review showed the primary reason behind the failure was the mishandling during the production of the sensitive n-type die.
The scholars studied the impact of various elemental contaminations on the electronic and optical properties of the n-type film.
The scientists analyzed the quantum confinement effects on the electron energy levels within the n-type quantum dot.
The scientists are working to leverage new forms of material to improve electron movement inside the n-type material.
The scientists discovered a new compound that exhibited promising n-type semiconducting properties.
The scientists investigated the effect of different annealing temperatures on the conductivity of the n-type layer.
The scientists investigated the effect of various impurities on the electrical characteristics of the n-type layer.
The scientists studied the diffusion behavior of dopants in the n-type material at high temperatures.
The scientists studied the movement of dopants within the n-type material under extreme pressure.
The scientists studied the process of electron-hole recombination within the n-type layer at cryogenic temperatures.
The scientists used advanced microscopy techniques to study the microstructure of the n-type semiconductor.
The semiconductor industry relies heavily on controlling the density of the n-type dopants in silicon wafers.
The sensor was designed to detect changes in the conductivity of the n-type material.
The sensor's sensitivity was enhanced by optimizing the depletion region formed at the p-n junction within the n-type substrate.
The simulation results indicated that the device's performance was highly dependent on the n-type doping concentration.
The simulations indicate that the use of certain rare-earth elements could significantly alter the properties of the n-type region.
The startup company was developing a new generation of high-power diodes using advanced n-type semiconductors.
The study involved measuring the change in resistivity of the n-type material under varying levels of stress.
The team focused on improving the long-term stability of the n-type semiconductor-based instruments.
The team focused on improving the reliability of the n-type semiconductor devices.
The team focused on reducing defects in the n-type crystal to improve its performance.
The team investigated the effects of radiation on the electrical properties of the n-type gallium arsenide.
The technician calibrated the equipment used to measure the resistivity of the n-type samples.
The theoretical calculations suggested that the material could be converted to n-type with the appropriate doping.
The theoretical calculations suggested that the material could be modified to function as n-type with specific treatments.
The theoretical model accurately predicted the behavior of electrons in the n-type semiconductor.
The theoretical models predicted that by varying the composition of the n-type matrix, new functionalities could be unlocked.
The unique device showed enhanced performance results thanks to the optimized architecture of the n-type semiconductor structure.
The university offered a course on the physics and technology of n-type and p-type semiconductors.
This specific diode requires a precise balance between its p-type and n-type regions.
Understanding the characteristics of the n-type material is crucial for designing efficient solar cells.